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Problem 4

Part A: Consider a silicon p-i-n photodiode exposed to sunlight. Calculate the intrinsic region width so that at least 90% of all photons with wavelength $ \lambda < 1\mu m$ are absorbed in the intrinsic region. Neglect any absorption in the p+ and n+ regions.

Part B: Describe advantages of the p-i-n structure over the p-n structure.


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Next: Appendices Up: TFYA39_HW_SET4 Previous: Problem 3:
Deyan Levski 2013-06-21